不同退火温度In掺杂ZnO薄膜的表面形貌和光学性质  

Effect of Annealing Temperature on Microstructure and Surface Topography of In-doped ZnO Thin Films

作　　者：戴结林[1] 

机构地区：[1]合肥师范学院物理与电子工程系,合肥230061

出　　处：《硅酸盐通报》2010年第1期214-218,共5页Bulletin of the Chinese Ceramic Society

基　　金：安徽省重点科研计划项目(07020203009);安徽省高等学校省级自然科学研究项目(KJ2007B135)

摘　　要：用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和紫外-可见分光光度计观察4%(原子分数)In掺杂ZnO薄膜的微结构、表面形貌和光学性质。微结构分析表明:薄膜仍为六角纤锌矿结构,由于In杂质的掺入,使得薄膜结晶度劣化,退火温度对薄膜微结构影响较小;表面形貌观察结果显示:薄膜表面凹凸不平,450℃退火处理薄膜表面最平坦,尺寸在50～100nm之间小颗粒致密、均匀地分布于起伏的表面;紫外可见透射谱研究结果表明:随着退火温度升高,薄膜光学带宽Eg由3.267eV减小到3.197eV,该结果可能与薄膜表面残余应力发生变化密切相关。Microstructure,surface morphology and optical properties of ZnO thin film with 4at.% In doping concentration were measured by X-ray diffractometer,scanning electron microscope and UV-Vis spectrophotometer. Microstructure analysis shows that all films are polycrystalline and exhibit the hexagonal wurtzite structure. The crystallinity is deteriorated due to doping with indium. Intensity of the diffraction peaks almost has no change with annealing temperature increases. Surface morphology results indicate that the films are irregular,and possess the particle size of 50-100 nm having uniform and dense microstructure. Optical transmittance spectra show that as annealing temperature increases,the value of optical bandgap decreases from 3.267 to 3.197 eV,which might be induced by the transition of residual stress.

关 键 词：ZNO薄膜 退火温度 光学性质 

分 类 号：O484[理学—固体物理]