四元混晶InGaAsP应变量子阱在压力调制下的能带转型  

Tuning of the Band lineup Type of the Quaternary Mixed Crystal InGaAsP Quantum Wells Under Hydrostatic Pressure

作　　者：张院生[1,2] 郭子政[2] 

机构地区：[1]集宁师范学院物理系,内蒙古乌兰察布012000 [2]内蒙古师范大学物理与电子信息学院,内蒙古呼和浩特010022

出　　处：《内蒙古师范大学学报（自然科学汉文版）》2010年第2期134-138,142,共6页Journal of Inner Mongolia Normal University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(10765003)

摘　　要：采用模型固体理论计算了四元混晶In1-xGaxAsyP1-y/In0.85Ga0.15As0.7P0.3/In1-xGaxAsyP1-y单量子阱系统中电子和空穴的能带结构,研究了流体静压力对能带的调制作用.结果表明:通过引入流体静压力,可以方便地实现单量子阱的能带转型(类型Ⅰ到类型Ⅱ的转变);当x=0.2,y=0.7时,电子、重空穴、轻空穴能带转型时的临界压力分别约为0.5,8,1.5GPa;0.5GPa≤P<8GPa时,量子阱的能带均为类型Ⅱ.The band profiles in In1-xGaxAsyP1-y/In0.85Ga0.15As0.7P0.3/In1-xGaxAsyP1-y single quantum well system are investigated using the model solid theory under considering the effect of biaxial strain caused by lattice mismatch between the epilayer and the substrate.The results indicate that the variety of hydrostatic pressure influences obviously the band lineups,resulting in the typeⅠto typeⅡ transformation.When x and y equal 0.2 and 0.7,respectively,the critical pressure for this transformation are approximately 0.5GPa and 8GPa and 1.5GPa for electron,heavy-hole and light-hole band.When pressure is in the range about 0.5～8GPa,the quantum wells exhibit typeⅡ band alignment.

关 键 词：四元混晶 量子阱 静压力 能带转型 应变 

分 类 号：O417.1[理学—理论物理]