Wide dynamic range CMOS image sensor with in-pixel double-exposure and synthesis  

作　　者：李斌桥 孙忠岩 徐江涛 

机构地区：[1]School of Electronics and Information Engineering,Tianjin University

出　　处：《Journal of Semiconductors》2010年第5期73-77,共5页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.60806010,60976030);the Tianjin Innovation Special Funds for Science and Technology,China(No.05FZZDGX00200).

摘　　要：A wide-dynamic-range CMOS image sensor（CIS） based on synthesis of a long-time and a short-time exposure signal in the floating diffusion（FD） of a five-transistor active pixel is proposed.With optimized pixel operation,the response curve is compressed and a wide dynamic range image is obtained.A prototype wide-dynamic-range CMOS image sensor was developed with a 0.18μm CIS process.With the double exposure time 2.4 ms and 70 ns,the dynamic range of the proposed sensor is 80 dB with 30 frames per second（fps）.The proposed CMOS image sensor meets the demands of applications in security surveillance systems.A wide-dynamic-range CMOS image sensor（CIS） based on synthesis of a long-time and a short-time exposure signal in the floating diffusion（FD） of a five-transistor active pixel is proposed.With optimized pixel operation,the response curve is compressed and a wide dynamic range image is obtained.A prototype wide-dynamic-range CMOS image sensor was developed with a 0.18μm CIS process.With the double exposure time 2.4 ms and 70 ns,the dynamic range of the proposed sensor is 80 dB with 30 frames per second（fps）.The proposed CMOS image sensor meets the demands of applications in security surveillance systems.

关 键 词：CMOS image sensor double exposure dynamic range five-transistor active pixel 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TP274.2[自动化与计算机技术—控制科学与工程]