A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology  

作　　者：王伟 黄北举 董赞 郭维廉 陈弘达 

机构地区：[1]State Key Laboratory for Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences [2]School of Information and Communication,Tianjin Polytechnic University

出　　处：《Journal of Semiconductors》2010年第5期102-105,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.60536030,60502005);the National High Technology Research and Development Program of China(Nos.2007AA01Z2A5,2006AA01Z239,2007AA03Z454).

摘　　要：A MOS-NDR（negative differential resistance） transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors（nMOSFETs） is fabricated in standard 0.35μm CMOS technology.This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD（resonant tunneling diode） in current-voltage characteristics.At the same time it can realize a modulation effect by the third terminal. Based on the MOS-NDR transistor,a flexible logic circuit is realized in this work,which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor.It turns out that MOS-NDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.A MOS-NDR（negative differential resistance） transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors（nMOSFETs） is fabricated in standard 0.35μm CMOS technology.This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD（resonant tunneling diode） in current-voltage characteristics.At the same time it can realize a modulation effect by the third terminal. Based on the MOS-NDR transistor,a flexible logic circuit is realized in this work,which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor.It turns out that MOS-NDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.

关 键 词：MOS-NDR CMOS resonant tunneling diode monostable-bistable transition logic element flexible logic gate 

分 类 号：TN32[电子电信—物理电子学]