Hg_(1-x)Mn_xTe晶体的垂直Bridgman法生长系统温度场分析  

Numerical Analysis of Thermal Field in a Vertical Bridgman Crystal Growth System of Hg_(1-x)Mn_xTe

作　　者：谷智[1] 刘泉喜[2] 介万奇[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072 [2]内蒙古科技大学工程训练中心,内蒙古包头014010

出　　处：《红外技术》2010年第5期249-254,共6页Infrared Technology

基　　金：国家自然科学基金资助项目(编号:50872111)

摘　　要：利用ANSYS有限元软件,以实际炉膛内的温度分布为边界条件,分析了包括生长中的Hg0.9Mn0.1Te晶体和晶体生长炉在内的生长系统的温度场。结果表明,晶体、熔体、高压Hg蒸气和石英的存在,使炉膛内的温度分布趋于平缓。在气液(气固)界面、液固界面、石英坩埚顶部和底部,轴向温度出现转折。随着晶体的生长,固液界面的轴向温度梯度逐渐减小。当石英坩埚完全处于高温区或低温区时,所在位置的温度分布更均匀,但远离坩埚区域的温度场受到的影响很小。By ANSYS finite element software, the analysis of the thermal field in a Vertical Bridgman Crystal Growth System of Hg0.9Mn0.1Te was carried out. The distribution of temperature in real crystal growth furnace was considered as boundary condition of Hg0.9Mno.1Te crystal. The calculation results indicated that when the crucible containing Hg0.9Mno.1Te was charged in the furnace, the temperature distribution in hearth would be homogenized because of high thermal conductance of Hg0.9Mn0.1Te crystal, melt, high pressure Hg vapour and quartz. Along with crystal growth, the axial temperature gradient at the interface of liquid-solid was reduced. The tendency of temperature distribution was changed at the interface of gas-liquid, liquid-solid, gas-solid because of the thermal conductibility of different phase.

关 键 词：Hg1-xMnxTe晶体 垂直Bridgman法 数值模拟 温度场 

分 类 号：TN213[电子电信—物理电子学]