掺杂ZnS纳米粒子的制备及应用  

Preparation and Applications of Doped ZnS Nanoparticles

作　　者：李娟娟[1] 徐光明[1] 

机构地区：[1]浙江大学化学系微分析系统研究所,杭州310058

出　　处：《化学进展》2010年第5期861-866,共6页Progress in Chemistry

摘　　要：近年来,掺杂ZnS半导体纳米材料作为一类新型发光材料,因其独特的光学特性和在众多领域中的广阔应用前景而成为研究的热点。由于量子尺寸效应,随着纳米粒子粒径减小,掺杂ZnS纳米粒子量子产率增加、带隙能增大,导致吸收光谱和荧光激发光谱发生蓝移,而荧光发射光谱红移。本文详细讨论了影响掺杂ZnS纳米粒子发光性能和量子产率的因素,并综述了掺杂ZnS纳米材料制备及其应用的研究进展。Doped ZnS seconductor nanocrystals as a new class of luminescent materials have become a research hotspot for their unique optical characteristics and great application prospects in various areas. As the particle size becoming smaller, the quantum efficiency of doped ZnS nanocrystals increases, and the band gap energy increases too, which results in a blue-shift in the absorption spectra and photolumineseent excitation spectra, while a red-shift in the photoluminescent emission spectrum due to quantum size effects. In this paper, the factors influencing the luminescence properties and luminescence quantum efficiency of doped ZnS nanoparticles are discussed, and recent developments of preparation and applications of doped ZnS semiconductor nanopartiele materials are reviewed.

关 键 词：掺杂ZnS纳米粒子 发光性能 量子产率 制备 应用 

分 类 号：O611.4[理学—无机化学] TQ125.1[理学—化学]