基于Si衬底的功率型GaN基LED制造技术  

Fabrication Technology of Silicon Substrate Power GaN-Based LED Chip

作　　者：胡爱华 

机构地区：[1]厦门华联电子有限公司,福建厦门361006

出　　处：《半导体技术》2010年第5期447-450,共4页Semiconductor Technology

摘　　要：介绍了Si衬底功率型GaN基LED芯片和封装制造技术,分析了Si衬底功率型GaN基LED芯片制造和封装工艺及关键技术,提供了产品测试数据。Si衬底LED芯片制备采用上下电极垂直结构与Ag反射镜工艺,封装采用仿流明大功率封装,封装后白光LED光通量达80 lm,光效达70 lm/W,产品已达商品化。与蓝宝石和SiC衬底技术路线相比,Si衬底LED芯片具有原创技术产权,可销往任何国家而不受国际专利的限制。产品抗静电性能好,寿命长,可承受的电流密度高,具有单引线垂直结构,器件封装工艺简单,而且生产效率高,成本低廉。其应用前景广阔,是值得大力发展的一门新技术。The encapsulation and fabrication technology of silicon substrate power GaN-based LED chip（SSPGLC）are introduced.Its fabrication,encapsulation process and critical technology are analyzed,and the test data are given.In the fabrication,vertical structure of upper and lower electrode and silver reflector process are employed,and lumileds high-power is used for encapsulation.The luminous flux of encapsulated white light LED can reach 80 lm,and the luminous efficiency is 70 lm/W.The product are commercialized.Compared to the technology approaches of using sapphire and SiC substrates,silicon substrate LED chip owns original technology property,in terms of which it can sell to any countries without the limitation of international patent.This product advances in better antistatic performance,longer lifetime,bearing higher current density,single down-lead vertical structure,simple encapsulation process,higher productivity and lower cost.Thus,SSPGLC should be promoted for its broad perspective.

关 键 词：硅衬底 氮化镓基 LED芯片 封装 光通量 

分 类 号：TN312.8[电子电信—物理电子学] TN305.94