双极型晶体管温度特性的Multisim仿真研究  

Research on Temperature Characteristics of Bipolar Transistors Based on Multisim

作　　者：郝宁眉[1] 李芳[1] 

机构地区：[1]中国石油大学(华东)信息与控制工程学院,山东东营257061

出　　处：《仪表技术与传感器》2010年第4期81-83,98,共4页Instrument Technique and Sensor

摘　　要：基于Multisim仿真分析,研究了双极型晶体管参数的温度特性。通过数据仿真和曲线拟合得到了双极型晶体管参数温度特性近似方程。分析了2种不同偏置的电压放大电路的温度性能,为掌握电路系统的温度漂移,优化系统性能提供设计依据。Temperature characteristics of bipolar transistors are investigated based on Multisim.Approximate equations about the temperature characteristics of bipolar transistors are fitted from experimental data.This paper analyze the temperature performances of two kinds of voltage amplification circuits under different bias condition.The results provide solid foundation for the understanding of the temperature drift characteristics of circuits,as well as the optimization of the system performance.

关 键 词：双极型晶体管参数 温度特性 MULTISIM仿真 

分 类 号：TP211[自动化与计算机技术—检测技术与自动化装置]