硅基BiFe_(0.95)Mn_(0.05)O_3/Pb(Zr_(0.4)Ti_(0.6))O_3/BiFe_(0.95)Mn_(0.05)O_3集成薄膜的结构及其铂电极电容器的性能  

Structure of Si-Base BiFe_(0.95)Mn_(0.05)O_3/Pb(Zr_(0.4)Ti_(0.6))O_3/BiFe_(0.95)Mn_(0.05)O_3 Integrated Thin Film and Its Platinum Electrode Capacitor Properties

作　　者：马闻良[1] 刘保亭[1] 王宽冒[1] 边芳[1] 李晓红[1] 赵庆勋[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《机械工程材料》2010年第4期42-46,共5页Materials For Mechanical Engineering

基　　金：国家"973"计划前期研究专项(2007CB616910);国家自然科学基金资助项目(60876055);高等学校博士点基金资助项目(20091301110002);河北省自然科学基金资助项目(E2008000620;E2009000207);河北省应用基础研究计划重点基础研究项目(08965124D)

摘　　要：用溶胶-凝胶法在Pt/Ti/SiO_2/Si(001)基片上制备了BiFe_(0.95)Mn_(0.05)O_3/Pb(Zr_(0.4)Ti_(0.6))O_3/BiFe_(0.95)Mn_(0.05)O_3(BFMO/PZT/BFMO)集成薄膜,采用X射线衍射仪分析了其物相结构;采用铁电测试仪考察了该集成薄膜与铂极构成的铁电电容器的性能。结果表明:该集成薄膜结晶较好,除BFMO、PZT及基片的衍射峰外没有其它衍射峰存在;当电场强度为0.7 MV·cm^(-1)时,Pt/BFMO/PZT/BFMO/Pt电容器的电滞回线对称性良好,剩余极化强度为17.9μC·cm^(-2),矫顽力为0.12 MV·cm^(-1);在电场强度为0.4 MV·cm^(-1)下测得的铁电电容器漏电流密度为2×10^(-5)A·cm^(-2),电容器在经过10^(10)次反转后未出现明显的疲劳现象。BiFe（0.95） Mn（0.05） O3/Pb（Zr（0.4） Ti（0.6）） O3/BiFe（0.95） Mn（0.05） O3（BFMO/PZT/BFMO） integrated thin film was fabricated on Pt/Ti/SiO2/Si（001） substrates via sol-gel method.The phase structure of the film was analyzed by XRD,and the properties of the ferroelectric capacitor composed of the film and platinum electrode were investigated by ferroelectric tester.The results show that the crystallinity of the film was relatively good.There were no diffraction peaks but BFMO,PZT and Si substrate.When the electric field intensity was 0.7 MV·cm^（-1）, the hysteresis loop of Pt/BFMO/PZT/BFMO/Pt capacitor had good symmetry,the residual electric polarization and coercivity were 17.9μC·cm^（-2） and 0.12 MV·cm^（-1）,respectively.Leakage current density of the capacitor was 2×10^（-5） A·cm^（-2） when the electric field intensity was 0.4 MV·cm^（-1）.No obvious fatigue of the ferroelectric capacitor was observed after 1 010 switching cycles.

关 键 词：溶胶-凝胶法 掺锰铁酸铋 锆钛酸铅 漏电流 集成薄膜 

分 类 号：O484[理学—固体物理]