硼含量对含硼金刚石单晶电学性能的影响  

Influence of Boron Concentration on Electrical Properties of Boron-doped Diamond Single Crystals

作　　者：张娜[1,2] 李木森[1,2] 张元培[1,2] 田斌[1,2] 

机构地区：[1]山东大学材料液固结构演变与加工教育部重点实验室,济南250061 [2]山东省超硬材料工程技术研究中心,邹城273500

出　　处：《人工晶体学报》2010年第2期295-298,303,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50772060);山东省自然科学基金(Y2007F12)

摘　　要：采用碳化硼添加量不同的铁基触媒,在高温高压下合成含硼金刚石单晶。用数字电桥和自制的电阻测量夹具测量了含硼金刚石单晶的电阻;用阴极射线发光光谱测量了金刚石单晶的光子频数;用XRD检测了不同硼含量掺杂的金刚石单晶的晶体结构。结果表明:随着触媒中碳化硼添加量的增加,含硼金刚石单晶的电阻率降低,可呈现半导体电阻特性。其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长,使受主能级提高,晶体的带隙变窄,载流子浓度提高。By additing of different contents of boron carbides in the iron-based catalysts,the boron-doped diamond single crystals had been synthesized under high pressure and high temperature.The resistances of the diamonds with different boron concentration were measured by a digital electric bridge and the self-made electrode clamps.The variations of photon numbers were detected by a cathodeluminescence.The phase structures were characterized by XRD.The results show that the specific resistance of the boron-doped diamonds significantly decreased with the increase of boron concentration and to be a semiconductor.It is indicated that the boron doping promotes the growth of（111） face of the diamonds,enhances acceptor level,narrow＇ s band gap and increases carrier concentration correspondingly.

关 键 词：含硼金刚石 碳化硼 高温高压合成 电阻 

分 类 号：TQ164[化学工程—高温制品工业]