化学溶液法制备涂层导体过渡层La_2Zr_2O_7厚膜的研究  

Fabrication of La_2Zr_2O_7 Thick Layers by Chemical Solution Deposition for Coated Conductors

作　　者：王榕[1] 索红莉[1] 程艳玲[1] 刘敏[1] 赵跃[1,2] 叶帅[1] 高忙忙[1] 周美玲[1] 

机构地区：[1]北京工业大学材料学院新型功能材料教育部重点实验室,北京100022 [2]北京工业大学数理学院,北京100022

出　　处：《人工晶体学报》2010年第2期396-400,共5页Journal of Synthetic Crystals

基　　金：国家973计划(2006CB601005);国家863项目基金(2009AA032401);国家自然科学基金(No.50771003;50802004);北京市自然科学基金(No.2092006)

摘　　要：为制备高质量的双轴织构La2Zr2O7(LZO)涂层导体过渡层,本文采用化学溶液法(Chemical solutiondeposition,简称CSD法),以乙酰丙酮镧和乙酰丙酮锆为溶质,丙酸为溶剂配制成前驱盐溶液,在立方织构的Ni-5at%W基底上用快速一步法退火工艺制备了LZO种子层及双层LZO厚膜。SEM观察种子层呈岛状均匀排列,符合种子层形貌特点。XRD结果显示0.06 mol/L浓度种子层上制备的LZO厚膜具有很强的双轴立方织构,其中(222)面Phi扫描和(400)面摇摆曲线半高宽值分别为6.37°和5.82°。SEM观察发现120 nm厚的LZO薄膜表面平整,无裂纹,为后续沉积YBCO提供了很好的模板。In order to fabricate biaxial textured La2Zr2O7（LZO）buffer layers of high quality for coated conductors,the results of LZO buffers on cube textured Ni-5at%W（Ni5W） substrates were obtained by chemical solution deposition（CSD） using the acetylacetone lanthanum and the acetylacetone zirconium as precursor salts,and the propionic acid as a solvent.After the rapid one-step heat treatment processes,LZO seed layer and two layers of LZO films were prepared on the cubic textured Ni5W substrate via CSD method.It was found that the deposited LZO film with seed layer derived from 0.06 mol/L concentration of solution has a sharp cubic biaxial texture.The values of full width at half maximum（FWHM） of（222） Phi scan and（400） rocking curve of the as-obtained LZO thick film are 6.37° and 5.82°,respectively.The SEM images reveal that the surface of the LZO buffer layer is smooth,homogenous and free-crack.Besides,the thickness of the buffer layers is about 120 nm.All the results show that this LZO film can be used as a buffer layer for the further deposition of YBCO film on it.

关 键 词：涂层导体 CSD方法 LZO过渡层 种子层 

分 类 号：TM26[一般工业技术—材料科学与工程]