In掺杂量对ZnO薄膜微结构和光学性质的影响  

Influence of In Doping Content on Microstructure and Optical Properties of ZnO Thin Films

作　　者：戴结林[1] 

机构地区：[1]合肥师范学院物理与电子工程系,合肥230061

出　　处：《人工晶体学报》2010年第2期486-489,共4页Journal of Synthetic Crystals

基　　金：安徽省科技厅重点项目(No.07020203009);安徽省高等学校省级自然科学研究项目(KJ2007B135)

摘　　要：采用溶胶-凝胶法分别制备未掺杂和In掺杂ZnO薄膜,用X射线衍射仪、扫描电镜和紫外可见分光光度计测试分析薄膜的微结构、表面形貌和光学性质。结果表明:In掺杂ZnO薄膜仍为六角纤锌矿结构,但In的掺入抑制ZnO薄膜的结晶,使得薄膜的结晶度降低。In掺杂ZnO薄膜表面呈网络状结构,随着In掺杂量的增加,表面起伏程度减小,空隙减少,表面平整,致密度提高。In掺杂ZnO薄膜的光学带宽Eg值均小于未掺杂ZnO薄膜,且随In掺杂量的增加先增大后减小,并用Burstein-Moss效应和缺陷浓度变化对光学带宽变化进行了解释。Undoped and In-doped ZnO films were prepared by sol-gel method.The microstructure,surface morphology and optical properties of the as prepared ZnO films were investigated by X-ray diffractometer,scanning electron microscope and UV-Vis spectrophotometer.The results show that the crystal structure of the In-doped ZnO films is hexagonal wurtzite.The crystal quality is poor because of In-doping.The surface morphology of the film has an apparent shape like network.As In doping content increases,surface roughness and void of the film decreases while the compact density increase.The optical band gap of In doped ZnO film is less than that of undoped ZnO film,and increases at first and then decreases when In doping concentration increases,which is explained with Burstein-Moss effect and the variation of defect concentration.

关 键 词：溶胶-凝胶法 In掺杂ZnO薄膜 光学性质 

分 类 号：O484[理学—固体物理]