电沉积WO_3薄膜及其光电性能的表征  

Electro-deposition and characterization of photoelectrochemical properties of WO_3 thin films

作　　者：郝金玲 姜春萍[1] 张艳辉[1] 杨鑫[1] 康洪[1] 陈金伟[1] 练晓娟[1] 刘尚军[1] 王瑞林[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610065

出　　处：《化学研究与应用》2010年第5期550-553,共4页Chemical Research and Application

基　　金：科技部863项目(2006AA05Z102)资助;教育部科技创新工程重大项目培育资金项目(707050)资助;高等学校博士学科点专项科研基金项目(20060610023)资助;成都市科技局攻关计划项目(06GGYB449GX-030;07GGZD139GX)资助

摘　　要：本文采用电化学法制备了均匀、附着力强的WO3薄膜,研究了不同沉积电位和不同的沉积时间对薄膜的光电性能影响,并使用了XRD,UV-vis,M-S,光电流光谱(IPCE)等分析表征手段对薄膜进行了表征。实验结果表明,所制得的WO3薄膜为单斜晶系,退火后沿(200)晶面择优生长;对比所有沉积电位,-0.45 V沉积电位(vs.SCE)所获得的WO3薄膜均匀致密,薄膜的带边在460 nm(≈2.7 eV),其光电转换性能最好;在实验范围内薄膜越厚,其光电转换性能越好。WO3 thin films were electrodeposited by different potentials in（NH4）2WO4 solution.The films were characterized by X-ray diffraction,UV-Vis absorption spectra,M-S plots and the incident photon to current efficiency（IPCE） spectra.The effects of different deposition potentials and times of the films on the photocurrent were studied.The optimized potential was found at-0.45 V vs SCE where the prepared thin films were monoclinic with the bandgap of 2.7 eV.The thicker the WO3 thin films within our experimental conditions,the better the IPCE values,the best IPCE value was about 7% at 380 nm.

关 键 词：氧化钨薄膜 电沉积 光催化分解水 光电流光谱(IPCE) 

分 类 号：O611.62[理学—无机化学]