含双偶氮结构的聚合物的合成及其电存储性能研究  

Synthesis and the electronic memory effect of a novel diazo-containing polymer

作　　者：吴江[1] 李娜君[1] 夏雪伟[1] 徐庆锋[1] 葛健锋[1] 王丽华[1] 路建美[1] 

机构地区：[1]江苏省有机合成重点实验室,苏州大学先进化学与生物材料创新团队,苏州大学材料与化学化工学部,江苏苏州215123

出　　处：《化学研究与应用》2010年第5期559-563,共5页Chemical Research and Application

基　　金：国家自然科学基金(20876101,20902065);高等学校博士学科点专项科研基金(20070285003)资助项目

摘　　要：设计并合成了一个结构新颖的含有双偶氮结构的聚合物,通过核磁共振氢谱和元素分析等方法分别对各个中间体、单体及其聚合物的结构进行了表征。以此双偶氮聚合物为中间层,分别以Al和ITO作为上电极和下电极,进一步制备了三明治结构的M/I/M型(Al/PBAzo/ITO)电存储器件。对器件的J-V特性曲线、存储机理以及器件的稳定性分别进行了研究。结果表明,由该偶氮聚合物所制备的器件为write-once read-many-times(WORM)的存储类型,ON/OFF状态下电流比超过105;分别在OFF和ON的状态下对器件施加一个大小为-1.0 V的连续电压,在200分钟内该器件都能保持良好的稳定性。A novel bisazo-containing polymer was designed and synthesized and characterized by 1H NMR.An electric memory device having the indium-tin oxide（ITO）/PBAzo/Al sandwich structure was fabricated and its electrical bistability was investigated.The as-fabricated device was initially found to be at the OFF state and the switching threshold voltage was-1.6 V.After undergoing the OFF-to-ON transition,the device remains the high conducting state（ON state）even after turning off the electrical power and applying a reverse bias.The device exhibits a write-once-read-many-times（WORM）memory effect with a high ON/OFF current ratio of up to 105 and a long retention time about 200 min in both ON and OFF states,which demonstrated that the synthetic bisazo-containing polymer possess a high potential to become polymeric memory devices.

关 键 词：双偶氮 聚合物 合成 电存储 

分 类 号：O631.3[理学—高分子化学]