PS湿敏二极管特性研究  

The Humidity sensitive Characteristics of a Porous Silicon Diode

作　　者：刘刚[1] 于军[1] 郑远开[1] 周文利[1] 

机构地区：[1]华中理工大学电子科学与技术系

出　　处：《华中理工大学学报》1999年第1期34-36,43,共4页Journal of Huazhong University of Science and Technology

基　　金：国家自然科学基金

摘　　要：研制了Ｎ型和Ｐ型二种衬底材料构成的ＰＳ湿敏二极管，在不同湿度下，分别测试其Ｉ－Ｖ特性．结果表明，在一定电压下，无论Ｎ型衬底，还是Ｐ型衬底，其ＰＳ二极管的反向电流都随相对湿度的升高而增大，其正向特性却基本保持恒定，即在一定电压下，其正向电流不随湿度发生明显变化．通过与ＰＳ的电容、电阻的湿敏特性进行比较，发现电流的湿敏特性具有较好的稳定性和重复性．并根据这种二极管的结构和电流输运过程。Humidity sensitive diodes were fabricated on substrates such as the p type and n type silicon. Under different humidities, the current voltage (I V) characteristics were measured. At a certain negative bias voltage, the reverse current of the PS diode increases as the relative humidity rises both on the p type silicon substrate and on the n type silicon one. But at a certain positive bias voltage, the positive current changes little as the humidity changes. Compared with the humidity sensitive capacitance and resistance, the humidity sensitive current of PS diode is more stable and more repetitive. The humidity sensitive mechanism of the PS diode is analyzed based on the diode structure.

关 键 词：多孔硅 二极管 I-V特性 湿敏二极管 湿敏器件 

分 类 号：TN310.1[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]