CCTO/Cu巨介电陶瓷  

CCTO/Cu Ceramics with Giant Dielectric Constant

作　　者：郑兴华[1] 肖娟[1] 严容[1] 黄旭[1] 郑可炉[2] 

机构地区：[1]福州大学材料科学与工程学院,福州350108 [2]福州大学物理与信息工程学院,福州350108

出　　处：《硅酸盐通报》2010年第2期304-308,共5页Bulletin of the Chinese Ceramic Society

基　　金：福建省高等学校新世纪优秀人才支持计划(XSJRC2007-16);福建省属高校项目(2007F5002);福州大学发展基金(2007-XQ-01)

摘　　要：采用固相反应法制备了CaCu3Ti4O12(CCTO)/Cu陶瓷,Cu改善了CCTO陶瓷的烧结性能。Cu添加较少时,CCTO/Cu陶瓷为CCTO单相;而当Cu添加较多时,CCTO/Cu陶瓷中出现第二相,并且随烧结温度的升高,第二相由CuO变成Cu2O。CCTO/Cu陶瓷存在明显的晶粒异常长大和层状晶界相。但是,当Cu添加量达到3wt%时,层状富铜晶界相大大减少且分布不均匀。CCTO/Cu陶瓷均具有巨介电常数(>104,1kHz)和较低的损耗(～10-1)。CCTO/Cu陶瓷的巨介电常数与其半导体部分密切相关。相对于CCTO陶瓷,CCTO/Cu陶瓷介电常数具有更强的温度依赖性。The CCTO/Cu ceramics has been prepared by solid state reaction. Cu addition improves the sintering characterization of the CCTO ceramics. With the less Cu content, CCTO/Cu ceramics is simple phase. The secondary phase appears in the CCTO/Cu ceramics with more Cu content. And the secondray phase changes from Cu0 to Cu20 with increasing sintering temperature. The CCTO/Cu ceramics exhibits very large grains and continious layered grain boundaries Cu-rich phase. However, the grain boundary phase obviously decreases and distributes inhomogeneity when the Cu content reaches 3wt%. All the CCTO/Cu ceramics displays giant dielectric constant（ 〉 10^4, 1kHz） and low dielectric loss （ -10-1）. The giant dielectric constant is closely related with the semiconductor part in the CCTO/Cu ceramics. The dielectric constant of CCTO/Cu ceramics has the stronger temperature dependence than CCTO ceramics.

关 键 词：巨介电常数 烧结温度 CCTO/Cu陶瓷 

分 类 号：TB34[一般工业技术—材料科学与工程]