对称双缺陷光子晶体的缺陷模规律  

Defect modes of photonic crystal with symmetric double defects

作　　者：马骥[1] 黄正逸[1] 沈小明[1] 陈宪锋[1] 

机构地区：[1]江苏工业学院数理学院,常州213164

出　　处：《激光技术》2010年第3期398-400,404,共4页Laser Technology

基　　金：江苏省高校自然科学基础研究面上资助项目(07KJD140036);江苏工业学院理工扶持基金资助项目(JS200802)

摘　　要：为了了解对称双缺陷光子晶体的传输特性,采用传输矩阵法进行了数值模拟研究。当两缺陷层中间的介质层数目大于缺陷两外侧介质层总数时,在禁带中只出现单一的缺陷模,且其透射率随它们的差异的增大而迅速减小;但当中间的介质层数目小于两外侧介质层总数时,在禁带中将会出现两个透射率为1的缺陷模,且两缺陷模的间距随它们的差异的增大而增大。结果表明,缺陷层的位置对缺陷模的影响较大,要使缺陷层中的局域电场得到有效提高,必须使缺陷层靠近光子晶体的正中心。In order to learn the propagating characteristics of the photonic crystal with symmetric double defects, they were studied by means of transfer matrix. It is found that location of defect layers significantly affects the defect mode. If the number of dielectric layers between the two defect layers is greater than the total number of dielectric layers outside the two defect layers, only one single defect mode exists in the band gap and its transmittance reduces rapidly as the difference between the two numbers increases. However, if the number of dielectric layers between the two defect layers is less than the total number of dielectric layers outside the two defect layers, two defect modes with transmittance of 1 exist in band gap and the distance between the two defect modes increases as the difference of the two numbers increases. The spatial electric field distribution of defect mode was also discussed. In order to effectively enhance the electric field in the defect layers, the double defect layers must be close to the center of photonic crystal.

关 键 词：物理光学 光子晶体 缺陷模 传输矩阵 

分 类 号：O431.2[机械工程—光学工程]