Y掺杂钛酸钡薄膜的Sol-Gel法制备及PTC效应  

PTC Effect of Y\|Doped BaTiO_3 Thin Film Prepared by Sol\|Gel Process

作　　者：龚健[1] 符小荣[2] 宋世庚[1] 谭辉[1] 陶明德[1] 

机构地区：[1]中国科学院新疆物理研究所,乌鲁木齐830011 [2]中国科学院上海冶金研究所信息功能材料国家重点实验室,上海200050

出　　处：《Journal of Semiconductors》1999年第3期246-249,共4页半导体学报（英文版）

摘　　要：本文采用 Sol- Gel法在 Pt/Ti/Si( 1 0 0 )衬底上制备了 Y掺杂半导化 Ba Ti O3的 PTC薄膜 ,前驱物为醋酸钡、钛酸四丁酯 ,溶剂体系选用乙二醇 -乙二醇甲醚 -甲醇 -水 ,添加乙酰丙酮作为螯合剂及聚乙二醇作为表面活性剂 .其 R- T特性转变温度约为 1 38℃ ,升阻比达 4个数量级 ,转变温区约 2℃ .This paper reports the PTC effect of Y\|doped BaTiO 3 thin film on Pt/Ti/Si(100) substrates by using sol\|gel processes. We chose barium acetate and tetrabuyyl titanate as precursors. The solvent system is ethylene glycol\|methoxyethanol\|methanol\|water, appended acetylacetone as chelating agents and polyethylene glycol as surfactant. The R\|T characteristic of thin film is measured. The PTC resistivity ratio is over 10 4. The temperature of PTCR jump is about 138℃ and the temperature region is about 2℃.

关 键 词：钛酸钡薄膜 铁电材料 掺杂 PTC效应 

分 类 号：TM223.013[一般工业技术—材料科学与工程] TN305.3[电气工程—电工理论与新技术]