用激光将廉价有机硅烷合成SiC纳米粉的研究  

Laser Synthesis of Nano size SiC Powder from Cheap Organo silane

作　　者：张滨[1] 国玉军[1] 傅淑云 才庆魁 张世伟 巴德纯 

机构地区：[1]东北大学材料与冶金学院

出　　处：《中国激光》1999年第1期93-96,共4页Chinese Journal of Lasers

摘　　要：采用激光诱导二甲基二乙氧基硅烷气相合成了ＳｉＣ纳米陶瓷粉，对其合成工艺进行了研究，用多种分析手段对粉体进行了测试表征，同时对合成的非晶纳米ＳｉＣ粉和初期晶化进行了探讨。实验结果表明：通过控制反应物蒸气流量，可对反应温度进行控制，从而实现对粉体组成、结构进行控制。在其他条件不变时，当反应物蒸气流量为７００～８２０ｓｃｃｍ时，可制得较为理想的平均粒径为１０～１５ｎｍ的非晶ＳｉＣ纳米粉；非晶ＳｉＣ纳米粉在１１６０℃氩气氛下晶化处理，开始晶化，由非晶ＳｉＣ经固相反应得到β－ＳｉＣ。Nanometer ceramic SiC powders have been synthesized by laser induced Diethoxydimethylsilane. The process of the formation of the powders was studied. The powders produced were examined and characterized by various methods. At the same time, the crystallization behavior of the laser synthesised nano amorphous SiC has been studied primarily. The results showed that the reaction temperature could be controlled by controlling the reactant flow rate, and the powders composition and structure could also be controlled. When the other conditions were fixed and the reactant vapor flow rates were 700￣820 sccm, the ideal amorphous SiC nano powders were produced. It was found that the initial crystallization temperature of the amorphous nano SiC powders was 1160℃and β SiC could be obtained from the solid reaction of amorphous SiC.

关 键 词：激光合成 纳米粉 晶化 硅化硅 

分 类 号：TN304.24[电子电信—物理电子学] TN204