Bi_3Ge_4O_(12)晶体辐照损伤的热释光研究  

Thermoluminescence Study on Radiation Damage of Bi_4Ge_3O_(12) Crystal

作　　者：魏宗英 何崇藩[1] 殷之文[1] 

机构地区：[1]中国科学院上海硅酸盐研究所

出　　处：《人工晶体学报》1990年第4期324-330,共7页Journal of Synthetic Crystals

摘　　要：本文报导了掺杂与不掺杂Bi_4Ge_3O_(12)(BGO)晶体的烈释光的测定;探讨了热释光与辐照剂量、掺杂条件和样品退火的关系;提出了BGO热释光的机制;并讨论了热释光与辐照损伤之间的联系。The study of thermoluminescence of BGO (Bi_4Ge_3O_(12)) and itsdependence on radiation dose, doping and annealing of sample are reported.The mechanism of the thermoluminescence has been proposed, and the corre-lation between the thermoluminescence and the radiation damage effect hasalso been studied in this paper.

关 键 词：锗酸铋 晶体 热释光 辐照损伤 

分 类 号：O614.532[理学—无机化学]