用“浸泡”技术提高Nd:YAP晶体质量  

Improvement of Quality of Nd:YAP Crystals during the Growth Process by "Immersion" Technique

作　　者：吴锦华[1] 施真珠 史子康[1] 

机构地区：[1]中国科学院福建物质结构研究所

出　　处：《人工晶体学报》1990年第4期347-352,共6页Journal of Synthetic Crystals

摘　　要：在用引上法生长Nd:YAP单晶中引入“浸泡”工艺后,可使晶体减少应力,降低散射颗粒等缺陷密度。本文首次用正电子湮没技术揭示了有、无“浸泡”生长的Nd:YAP晶体质量与正电子湮没寿命谱之间的关系。为正确使用“浸泡”工艺、改善YAP晶体质量提供了参考依据。The 'immersion' technique adopted in Nd: YAP crystal growthprocess by Czochralski method can result in the reduction of structuralstresses and a decrease of defect density in the crystal including the scatte-ring particles. For the first time the positron annihilation technique has beenused to reveal the relationship between the crystal defects with or without the'immersion' technique during the growth and the life spectrum of positronannihilation. It has provided strong evidence for the correct use of 'immersion'technique thereby resulting in the improvement of the crystal quality.

关 键 词：ND:YAP 单晶 提拉法 钙钛矿型 

分 类 号：O614.231[理学—无机化学]