低硅钢熔融盐电化学方法渗硅  

The Formula Optimization of Molten Salts for Electrodeposition Siliconizing

作　　者：杨海丽[1,2] 李运刚[1] 张玉柱[1,2] 唐国章[1] 崔崇[1] 

机构地区：[1]河北理工大学冶金与能源学院河北省现代冶金技术重点试验室,河北唐山063009 [2]燕山大学材料科学与工程学院,河北秦皇岛066004

出　　处：《电镀与精饰》2010年第5期1-3,11,共4页Plating & Finishing

基　　金：国家自然科学基金资助项目(50474079)

摘　　要：采用对称-单纯形法对电沉积渗硅熔融盐配方进行了优化设计。设计结果表明,通过计算得到的渗层厚度与熔融盐成分之间的回归方程具有明显的显著性,选择出最佳配方为n(NaCl)∶n(KCl)∶n(NaF)∶n(SiO2)=1∶1∶3∶0.3,用此配方在低硅钢基体上获得了34.51μm渗硅层,实验值与预测值基本吻合。辉光放电光谱仪测定出渗硅层中Si元素呈梯度分布,渗硅层与基体结合良好,光学金相照片显示渗硅层厚度均匀。The formula of molten salts for electrodeposition siliconizing was optimized using symmetry-simplex method.The results show that the calculated regression equation between siliconized layer thickness and molten salts components is well fit for actual relation.Using the obtained formula component of n（NaCl）∶n（KCl）∶n（NaF）∶n（SiO2）=1∶1∶3∶0.3（in mole）,a 34.51 μm siliconized layer is achieved on a low-silicon steel base.From glow discharge spectrometry,it is found that Si is observeed in a gradient distribution along with the thickness,and the thickness of siliconized layer is also uniform.

关 键 词：配方优化 对称-单纯形设计 渗硅层 

分 类 号：TG174.445[金属学及工艺—金属表面处理]