单轴取向p型半导体CuI薄膜的制备与表征  

Preparation and Characterization of Uniaxial Orientation P Type Semiconductor CuI Film

作　　者：于庆先[1] 孙四通[1] 

机构地区：[1]青岛科技大学材料科学与工程学院,山东青岛266042

出　　处：《新技术新工艺》2010年第5期110-112,共3页New Technology & New Process

摘　　要：在室温下用反应沉淀制取了CuI粉体,用溶液生长法在玻璃载体上制备了单轴取向p型半导体CuI薄膜。用XRD、SEM对样品进行了分析,结果表明,CuI粉体为片状结构;晶体薄膜是(111)晶面沿玻璃平行生长的单轴取向马赛克CuI薄膜。阐明了单轴取向CuI薄膜形成的机理。Under thc normal temperature, CuI powder was prepared through precipitation and reaction, uniaxial orientation P type semiconductor CuI film was deposited on the glass by Solution-growth method. CuI power and thin film were analyzed by SEM and XRD. The results showed that CuI powder is the sheet structure, crystal film is the uniaxial orientation mosaic CuI film that grew following the glass plane. Mechanism of uniaxial orientation CuI film formation was stated.

关 键 词：CuI薄膜 片状结构 单轴趋向 

分 类 号：TQ131.2[化学工程—无机化工]