A Controlled Phase Gate with Nitrogen-Vacancy Centers in Nanocrystal Coupled to a Silica Microsphere Cavity  

作　　者：XUE Peng 

机构地区：[1]Department of Physics, Southeast University, Nanjing 211189

出　　处：《Chinese Physics Letters》2010年第6期5-8,共4页中国物理快报（英文版）

基　　金：Supported by National Natural Science Foundation of China under Grant No 10944005, and the Southeast University Staxtup Fund.

摘　　要：We show how a controlled phase gate, induced by adiabatic passage of dark states, can be implemented with the nitrogen-vacancy defects in nanocrystal coupled to the optical whispering gallery mode in a silica microsphere cavity. The gate presented is robust to the fluctuations of the experimental parameters compared to the dynamical and geometric phases gates. The feasibility of this scheme is characterized by exact numerical simulations that incorporate various sources of experiment noise. The results demonstrate the practicality by way of current experimental technologies.We show how a controlled phase gate, induced by adiabatic passage of dark states, can be implemented with the nitrogen-vacancy defects in nanocrystal coupled to the optical whispering gallery mode in a silica microsphere cavity. The gate presented is robust to the fluctuations of the experimental parameters compared to the dynamical and geometric phases gates. The feasibility of this scheme is characterized by exact numerical simulations that incorporate various sources of experiment noise. The results demonstrate the practicality by way of current experimental technologies.

分 类 号：TB383[一般工业技术—材料科学与工程] TM734[电气工程—电力系统及自动化]