Enhanced Field Emission from Large-Area Arrays of WlsO49 Pencil-Like Nanostructure  

作　　者：LI Zheng-Lin DENG Shao-Zhi XU Ning-Sheng LIU Fei CHEN Jun 

机构地区：[1]State Key Lab of Optoelectronic Materials and Technologies, and Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275

出　　处：《Chinese Physics Letters》2010年第6期262-265,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 50725206,50802117,U0634002 and 50672135;the National Basic Research Program of China under Grant Nos 2003CB314701,2007CB935501 and 2010CB327703;the National High-Tech Research and Development Program of China under Grant No2008AA03A314;the Doctoral Foundation of Education Ministry of China under Grant No 20070558063;the Science and Technology Department of Guangdong Province;the Department of Information Industry of Guangdong Province;the Science and Technology Department of Guangzhou City.

摘　　要：Field enhancement and field screening are two major factors affecting field emission performance of arrays of quasi one-dimensional nanostruetures. We have observed enhanced field emission from large-area arrays of W18O49 pencil-like nanostructure due to both the effects of high aspect ratio and enlarged spacing between neighboring nanostructures. These arrays may be grown on silicon substrates by the multi-step thermal evaporation process. The spacing of nanotip-to-nanotip between neighboring nanostruetures may be increased by adjusting the growth temperature. The arrays are observed to have a typical turn-on field as low as about 1.26 MV/m and a threshold field as low as about 3.39 MV/m, resulting in increasing field enhancement and decreasing field screening effect.Field enhancement and field screening are two major factors affecting field emission performance of arrays of quasi one-dimensional nanostruetures. We have observed enhanced field emission from large-area arrays of W18O49 pencil-like nanostructure due to both the effects of high aspect ratio and enlarged spacing between neighboring nanostructures. These arrays may be grown on silicon substrates by the multi-step thermal evaporation process. The spacing of nanotip-to-nanotip between neighboring nanostruetures may be increased by adjusting the growth temperature. The arrays are observed to have a typical turn-on field as low as about 1.26 MV/m and a threshold field as low as about 3.39 MV/m, resulting in increasing field enhancement and decreasing field screening effect.

分 类 号：TN215[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]