铝锆共掺杂氧化锌透明导电薄膜的低温制备及特性研究  

Low Temperature Growth and Properties of Al-Zr Co-Doped ZnO Films

作　　者：张化福[1] 刘汉法[1] 袁长坤[1] 类成新[1] 

机构地区：[1]山东理工大学理学院,淄博255049

出　　处：《真空科学与技术学报》2010年第3期306-310,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：利用直流磁控溅射法在室温玻璃衬底上制备出了可见光透过率高、电阻率低的铝锆共掺杂氧化锌(ZAZO)透明导电薄膜。讨论了溅射功率对ZAZO薄膜结构、形貌和光电性能的影响。实验结果表明,溅射功率对ZAZO薄膜的结构、形貌和电学性能有很大影响,而对其光学性能影响不大。扫描电子显微镜和X射线衍射仪研究结果表明,ZAZO薄膜为六方纤锌矿结构的多晶薄膜,具有垂直于衬底方向的c轴择优取向。当溅射功率为120 W时,薄膜的电阻率达到最小值5.28×10-4Ω.cm,其可见光区平均透过率超过94%。The transparent conductive ZnO films, co-doped with Al and Zr, were deposited by DC magnetron sputter- ing at room temperature on glass substrates. The impacts of the sputtering power on properties of the films were experimen- tally evaluated. The microstructures were characterized with X-ray diffraction, scanning electron microscopy. The results show that the sputtering power strongly affects its microstructures and its electronic properties of the polycrystalline films with hexagonal wurtzite phased grains, preferentially orientated in the c-axis and perpendicular to the substrate. At a sput- tering power of 120 W,the minimum resistivity and the high transmittance in the visible range were found to be 5.28 × 10-4Ω. cm and 94%, respectively.

关 键 词：铝锆共掺杂氧化锌 透明导电薄膜 磁控溅射 溅射功率光电性能 

分 类 号：O484.1[理学—固体物理]