硅掺杂MgB_2超导薄膜的制备及研究  

THE STUDY OF THE MgB_2 FILMS DOPED Si

作　　者：张从尧[1] 王银博[1] 冯庆荣[1] 

机构地区：[1]北京大学物理学院,北京100871

出　　处：《低温物理学报》2010年第3期161-165,共5页Low Temperature Physical Letters

基　　金：国家自然科学基金(批准号:50572001);十一;五"973计划"(批准号:2006CD601004);教育部优秀本科生基础科研基金(批准号:J0630311)资助的课题

摘　　要：本文报道了基于混合物理化学气相沉积法(Hybrid physical-chemical vapordeposition,简称为HPCVD),以硅烷热解出的Si原子作硅源,在SiC衬底上原位生长了一系列硅掺杂MgB_2超导薄膜样品.样品中最大硅掺杂量是9%.与纯净的MgB_2薄膜相比较,掺杂样品的超导临界转变温度T_c没有大幅下降,超导临界电流J_c得到了一定提升.在温度为5K,外加垂直磁场为3T的条件下,样品的临界电流密度最大达到2.7×10~5Acm^(-2).同时上临界场H_(c2)在超导转变温度附近对于温度的变化曲线斜率—dH/dT也有一定的提高.We report the synthesis and characterization of silicon-doped MgB_2 films fabricated by hybrid physicalchemical vapor deposition（HPCVD） using silane as the doping source.Various amounts of Si up to 9%were added into MgB_2 thin films,which are in situ epitaxial growth on SiC.Compared with the undoped film,the superconducting transition temperature（T_c） of the doped film does not change significantly,however its magnetic critical current density（J_c） has been increased.J_c of the film with 5.0 at%is up to 2.7×10~5 Acm^（-2） for 3T perpendicular field. And the slope of the upper critical field（H_（c2）） curve of the doped film is slightly higher than that for the undoped MgB_2 film.

关 键 词：MgB_2超导薄膜 硅掺杂 混合物理化学气相沉积法(HPCVD) 

分 类 号：O484.1[理学—固体物理]