退火升温速率对VO_2薄膜相变性能的影响  

Effect of Anneal Heating Rate on Phase Transition Characteristics of VO_2 Thin Film

作　　者：何鹏[1] 颜家振[1] 黄婉霞[1] 张月[1] 罗蓉蓉[1] 蔡靖涵[1] 

机构地区：[1]四川大学,四川成都610064

出　　处：《稀有金属材料与工程》2010年第5期867-870,共4页Rare Metal Materials and Engineering

摘　　要：采用溶胶-凝胶法在云母(001)衬底表面制备氧化钒薄膜,然后通过高温退火获得VO2多晶膜。利用SEM、FTIR等手段,分析不同退火升温速率条件下所制备薄膜的微观形貌、光学性能和热致相变特性。结果表明:在退火升温速率为8℃/min时,所制备的VO2薄膜具有最优异的热致相变特性,相变温度为65℃,滞后温宽为10℃。Vanadium oxide thin films were fabricated on muscovite（001） substrates by sol-gel method,and the polycrystalline VO2 films were obtained by subsequent high temperature annealing.The morphology,optic properties and thermochromic phase transition characteristics of vanadium dioxide thin films annealed at different heating rate were investigated by SEM and FTIR.Results show that after annealed at the heating rate of 8℃/min,the VO2 films exhibit excellent thermochromic phase transition characteristics with phase transition temperature of 65℃ and hysteresis width of 10℃.

关 键 词：升温速率 VO2薄膜 热致相变 光学性能 

分 类 号：TB383.2[一般工业技术—材料科学与工程]