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作 者:赵波[1] 姜久兴[1] 姬广举[1] 吴丰民[1]
机构地区:[1]哈尔滨理工大学应用科学学院,黑龙江哈尔滨150080
出 处:《应用光学》2010年第3期499-502,共4页Journal of Applied Optics
摘 要:为了改进白光顶发射器件的色纯度,使用高折射率的材料MoOx作为光输出耦合层,通过对器件的减反射膜厚度的优化,制作了硅基顶发射有机白光器件。器件结构为Si/Ag(60nm)/MoOx(2nm)/NPB(50nm)/DPVBi(7nm)/rubrene(0.2nm)/Alq3(43nm)/LiF(1nm)/Al(1nm)/Ag(20nm)/MoOx。并结合实验,优化了减反射膜的厚度。随着MoOx厚度的增加,在460nm左右的蓝光区域出现了一个明显的发光峰,色坐标逐渐向白光等能点(0.33,0.33)靠近,实现了对白光色度的调节,制作出了高效率的白光顶发射有机电致发光器件。Top-emitting white organic light-emitting device was fabricated by optimizing the thickness of MoOx layer with high refractive index and low absorption in the visible region,which is used as out-coupling layer. The structure of the device is Si/Ag(60nm)/MoOx(2nm)/NPB(50nm)/DPVBi(7nm)/rubrene(0.2nm)/Alq3(43nm)/LiF(1nm)/Al(1nm)/Ag(20nm)/MoOx (xnm). We analyzed the influence of out-coupling layer’s growth on devices’performance. We researched the influence of the MoOx’s thicknesses on EL spectrum. With the increase of MoOx thickness,the transmittance was enhanced for blue light region and the spectrum covered visible light region. CIE was changed from (0.30,0.49) to (0.33,0.42) when we added 30nm MoOx as out-coupling layer. When the out-coupling layer was 40nm MoOx,CIE was (0.30,0.38). It is found that the CIE moved to the equal energy point.
分 类 号:TN383.1[电子电信—物理电子学]
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