HL-1M装置器壁硅化对电子速率分布的影响  

INFLUENCE OF WALL SILICONIZATION ON THE DISTRIBUTION OF ELECTRON VELOCITY IN THE HL 1M TOKAMAK

作　　者：杨进蔚[1] 曾庆希[1] 张炜[1] 

机构地区：[1]核工业西南物理研究院

出　　处：《核聚变与等离子体物理》1999年第1期39-44,共6页Nuclear Fusion and Plasma Physics

基　　金：核科学基金

摘　　要：在欧姆加热和低混杂波电流驱动（ＬＨＣＤ）条件下，利用碘化汞（ＨｇＩ２）半导体探测器和碘化钠（ＮａＩ）探测器测出了ＨＬ－１Ｍ装置的Ｘ射线能谱，研究了器壁硅化前后电子速率分布和电子温度变化的特点。After the wall siliconization, X ray spectra are measured by HgI 2 and NaI detectors during ohmic heating and LHCD discharge in the HL 1M tokamak. The characteristics of the electron velocity distribution and time evolution of electron temperature are described. The relation between the radiation flux of X ray and the energy deposition of lower hybrid wave is obtained.

关 键 词：器壁硅化 软X射线能谱 电子速率分布 托卡马克 

分 类 号：TL631.24[核科学技术—核技术及应用]