AlN/NbN纳米结构多层膜的共格异结构外延生长研究  

Hetero-structure coherent epitaxial growth in AlN/NbN nano-structured multilayers

作　　者：喻利花[1] 薛安俊[1] 董松涛[1] 许俊华[1] 

机构地区：[1]江苏科技大学材料科学与工程学院江苏省先进焊接技术重点实验室,镇江212003

出　　处：《物理学报》2010年第6期4150-4155,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50574044);江苏省自然科学基金(批准号:BK2008240)资助的课题~~

摘　　要：采用射频磁控溅射法制备了NbN,AlN单层膜及不同调制周期的AlN/NbN纳米结构多层膜,采用X射线衍射仪、小角度X射线反射仪和高分辨透射电子显微镜等对薄膜进行了表征.结果表明:单层膜AlN为六方结构,NbN为面心立方结构;AlN/NbN多层膜中AlN为六方结构,NbN为面心立方结构,界面处呈共格状态,其共格关系为c-NbN(111)面平行于h-AlN(0002)面,晶格错配度为0.13%.热力学计算表明:AlN/NbN多层膜中不论AlN层与NbN层的厚度如何,AlN层均不会形成亚稳的立方AlN,而是形成自身的平衡六方结构,与NbN形成异结构外延生长.Monolithic AlN,NbN films and AlN/NbN multilayers with different modulation periods were prepared by reactive magnetic sputtering. The films were characterized by X-ray diffraction,X-ray reflectivity and high-resolution transmission electron microscopy. The results showed that the crystal structure of monolithic AlN and NbN films is close-packed hexagonal （ hcp） and face-centered cubic （ fcc）,respectively. The crystal structure of AlN and NbN is hcp and fcc,respectively,in AlN/NbN multilayers. The interfaces between AlN layers and NbN layers are coherent,i. e. , c-NbN （111）∥h-AlN（0002）. The lattice mismatch of AlN/NbN multilayers is 0. 13% . The thermodynamic calculation revealed that no matter how thickness of AlN or NbN layer is,the AlN layer does not form nonequilibrium structure of fcc, but the equilibrium structure of hcp. The AlN layers grow in the way of hetero-epitaxial coherent growth with NbN layers.

关 键 词：AlN/NbN纳米结构多层膜 共格外延生长 异结构 

分 类 号：O484.1[理学—固体物理]