透射式指数掺杂GaAs光电阴极最佳厚度研究  

Research on the optimal thickness of transmission-mode exponential-doping GaAs photocathode

作　　者：杨智[1] 邹继军[1] 常本康[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,南京210094

出　　处：《物理学报》2010年第6期4290-4295,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60678043;60801036)资助的课题~~

摘　　要：通过研究指数掺杂GaAs光电阴极中光电子扩散漂移长度与均匀掺杂GaAs光电阴极中光电子扩散长度的差异,确定透射式指数掺杂GaAs光电阴极的最佳厚度范围为1.6—2.2μm.利用量子效率公式对透射式指数掺杂GaAs光电阴极最佳厚度进行了仿真分析,发现厚度为2.0μm时阴极积分灵敏度最大.外延生长阴极厚度分别为1.6和2.0μm的两种透射式指数掺杂GaAs样品并进行了激活实验,测得样品的积分灵敏度分别为1228和1547μA/lm,两者的比值为79.6%.实验结果与仿真结果符合.The difference between the diffusion drift length of photoelectrons in exponential-doping GaAs photocathode and that in uniform-doping GaAs photocathode is studied. According to quantum equations, the optimized thickness of transmission-mode exponential-doping GaAs photocathode is simulated to be 2. 0 μm. Two transmission-mode exponential-doping GaAs samples with the thickness of 1. 6 and 2. 0 μm are activated by （ Cs,O） alternation technique. Integral sensitivities of the two samples are 1228 and 1547 μA/lm,respectively. The ratio of integral sensitivities of the two samples is 0. 796∶ 1,which agrees with the simulation result.

关 键 词：GAAS光电阴极 透射式 指数掺杂 厚度 

分 类 号：O462.3[理学—电子物理学]