Synergistic effects of neutron and gamma ray irradiation of a commercial CHMOS microcontroller  

作　　者：金晓明 范如玉 陈伟 林东生 杨善潮 白小燕 刘岩 郭晓强 王桂珍 

机构地区：[1]Department of Engineering Physics,Tsinghua University [2]Northwest Institute of Nuclear Technology

出　　处：《Chinese Physics B》2010年第6期429-436,共8页中国物理B（英文版）

摘　　要：This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20, which is a 16-bit high performance member of the MCS96 microcontroller family. The electrical and functional tests were made in three irradiation environments： neutron, gamma rays, combined irradiation of neutron and gamma rays. The experimental results show that the neutron irradiation can affect the total ionizing dose behaviour. Compared with the single radiation environment, the microcontroller exhibits considerably more severe degradation in neutron and gamma ray synergistic irradiation. This phenomenon may cause a significant hardness assurance problem.This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20, which is a 16-bit high performance member of the MCS96 microcontroller family. The electrical and functional tests were made in three irradiation environments： neutron, gamma rays, combined irradiation of neutron and gamma rays. The experimental results show that the neutron irradiation can affect the total ionizing dose behaviour. Compared with the single radiation environment, the microcontroller exhibits considerably more severe degradation in neutron and gamma ray synergistic irradiation. This phenomenon may cause a significant hardness assurance problem.

关 键 词：total ionizing dose neutron irradiation synergistic effect MICROCONTROLLER 

分 类 号：TN432[电子电信—微电子学与固体电子学]