绝缘栅双极晶体管的设计要点  

The Key Design Points of Insulated Gate Bipolar Transistor

作　　者：张景超[1] 赵善麒[1] 刘利峰[1] 王晓宝[1] 

机构地区：[1]江苏宏微科技有限公司,江苏常州213022

出　　处：《电力电子技术》2010年第1期1-3,16,共4页Power Electronics

摘　　要：介绍了绝缘栅双极晶体管(IGBT)的基本结构和工作原理;讨论了IGBT各关键参数和结构设计中需要考虑的主要问题;分析了IGBT设计中需要协调的几对矛盾参数的关系以及影响IGBT可靠性的关键因素。The basic structure and operation mechanism of insulated gate bipolar transistor（IGBT）are introduced.The key electrical characteristics are discussed,as well as the key factors which should be considered when designing an IGBT.The trade-offs between different characters of an IGBT and the influences on its reliability are also analyzed.

关 键 词：绝缘栅双极晶体管 关键参数 结构设计 可靠性 

分 类 号：TN6[电子电信—电路与系统]