纳米氧化铝改性聚酰亚胺薄膜的制备与研究  

Preparation and Characterization of Polyimide Film Modified by Nano-Alumina Sol

作　　者：何明鹏[1] 刘俊[1] 陈昊[1] 李娟[1] 范勇[1] 

机构地区：[1]哈尔滨理工大学材料科学与工程学院,哈尔滨150040

出　　处：《绝缘材料》2010年第1期1-3,共3页Insulating Materials

基　　金：国家自然科学基金资助项目(50373008);黑龙江省科技攻关项目(GC04A216)

摘　　要：用溶胶-凝胶法制得纳米氧化铝溶胶,将其掺入到聚酰胺酸基体中,采用原位生成法制备了一系列不同掺杂量的PI/Al2O3复合薄膜。利用耐电晕测试装置、耐击穿测试装置、扫描电子显微镜(SEM)对薄膜进行了测试及表征。结果表明:随着掺杂量的提高耐电晕时间增大,当掺杂量为30%(质量分数)时PI薄膜的耐电晕时间为57.64 h,是未掺杂的15倍以上。随着掺杂量的提高杂化薄膜电气强度先增大后减小,但都比未掺杂的低。纳米氧化铝粒子在PI基体中分散较均匀。A nano-alumina sol was prepared by a sol-gel method and then was doped into a polyamic acid matrix.A sequence of Al2O3/PI composite films with different doping（mass percent） were obtained by an in situ polymerization.The structure and properties of the film were measured and characterized by corona discharge measuring device,breakdown strength measuring system and SEM,respectively.The result shows that the corona-resistant lifespan increases when the doping amount rises.The corona-resistant lifespan of polyimide composite film is 57.64 hours,about 14 times longer than that of pure PI film when the doping amount reaches 30%.The breakdown strength of the doped film increases first and then decreases with the rise of doping amount,but is lower than that of the undoped film. The nano alumina particles are dispersed evenly in the PI matrix.

关 键 词：聚酰亚胺 纳米氧化铝 电性能 杂化 

分 类 号：TM215.3[一般工业技术—材料科学与工程] TQ316.6[电气工程—电工理论与新技术]