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作 者:陈庆东[1] 杨传径[1] 毛爱霞[1] 姜志刚[2] 刘才龙[2]
机构地区:[1]河南科技大学理学院,河南洛阳471003 [2]吉林大学超硬材料国家重点实验室,长春130012
出 处:《河南大学学报(自然科学版)》2010年第3期248-251,共4页Journal of Henan University:Natural Science
基 金:国家自然科学基金资助项目(40473034)
摘 要:利用直流热阴极辉光放电方法制备出了高品质金刚石厚膜,生长速率达到20μm/h,生长厚度达到3mm.为了解其工作特性、优化沉积工艺,本文研究了放电电压对金刚石沉积速率和品质的影响.通过对扫描电镜、拉曼谱和XRD图谱分析得出,随着放电电压的增加,沉积速率呈下降趋势,电压在850~950V范围金刚石中石墨和非晶碳明显减少,晶粒均匀,表面晶向以(110)为主,金刚石薄膜的质量显著提高.Diamond film of high quality with thickness of 3 mm has been deposited by hot cathode direct current glow discharge at growth rate of 20 μm/h. Variety of discharge volts on the growth rate and quality of diamond film were studied in this paper. The products were characterized by field emission scanning electron microscope and Raman spectra. Results showed that the growth rate decreased and quality of diamond film was improved with the discharge volts increased. The grain size is uniform,the graphite and amorphous carbon decreased obviously and diamond (110) texture is main when discharge volt range was between 850~950 V.
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