添加V_2O_5对Mg_4Nb_2O_9微波介质陶瓷性能的影响  

Effects of V_2O_5 addition on the properties of Mg_4Nb_2O_9 microwave dielectric ceramics

作　　者：权微娟[1] 刘敏[1] 周洪庆[1] 

机构地区：[1]南京工业大学材料科学与工程学院,江苏南京210009

出　　处：《电子元件与材料》2010年第3期4-7,共4页Electronic Components And Materials

基　　金：江苏省科技支撑计划资助项目(NoBE2009168)

摘　　要：采用固相反应法制备了Mg4Nb2O9微波介质陶瓷,研究了添加V2O5对其烧结温度、微观结构和介电性能的影响。结果表明:当添加0.5%(质量分数)的V2O5时,Mg4Nb2O9陶瓷的烧结温度从1350℃降低到1150℃,烧结温度范围拓宽为1150～1300℃;在1150℃烧结5h后,其介电性能达到最佳:εr=11.86,Q·f=99828GHz(11.2GHz),τf=–57×10–6/℃(10～90℃,1MHz)。当w(V2O5)增大到1.5%时,Mg4Nb2O9陶瓷的介电性能变差。Mg4Nb2O9 microwave dielectric ceramics were prepared via the solid-state reaction method.The effects of V2O5 addition on the sintering temperature,microstructure and dielectric properties of Mg4Nb2O9 microwave dielectric ceramics were studied.The results show that,when 0.5%（mass fraction） V2O5 is introduced,the sintering temperature of Mg4Nb2O9 microwave dielectric ceramics is decreased from 1 350℃ to 1 150℃,while the sintering temperature range is widened to 1150～1300 ℃;After sintering for 5 h at 1150 ℃,optimal dielectric properties are obtained：εr = 11.86,Q·f=99828 GHz（11.2 GHz）,τf =–57×10–6/℃（10～90℃,1 MHz）.However,the dielectric properties of Mg4Nb2O9 microwave dielectric ceramics become worse when 1.5%（mass fraction） V2O5 is added.

关 键 词：微波介质陶瓷 Mg4Nb2O9 V2O5 介电性能 

分 类 号：TB321[一般工业技术—材料科学与工程]