硫掺杂对ZnO热电性能的影响  

Effects of S doping on the thermoelectric properties of ZnO

作　　者：左连勇[1] 沈鸿烈[1] 朱云广[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏南京210016

出　　处：《电子元件与材料》2010年第1期11-14,共4页Electronic Components And Materials

基　　金：江苏省科技支撑计划资助项目(No.BE2008020)

摘　　要：采用固相反应法制备了ZnO1-xSx块体材料(0≤x≤0.05);通过对样品X射线衍射谱(XRD)、电导率和Seebeck系数的测量,研究了S掺杂对ZnO晶体结构及热电性能的影响。结果表明:所有试样均为六方纤锌矿结构。在573 K时,ZnO1-xSx(0<x≤0.05)材料的电导率(1 723 S.m–1)比ZnO材料的电导率(3.02 S.m–1)大得多,同时二者的Seebeck系数相差较小。在1 073 K下,试样ZnO0.97S0.03具有最高的功率因子2.5×10–4 Wm–1K–2,是同温度下未掺杂ZnO功率因子的10倍。ZnO1-xSx（0≤x≤0.05） bulk samples were fabricated by the solid state reaction method.The effects of S doping on the crystalline structure and thermoelectric properties of ZnO were investigated through measuring the X-ray diffraction（XRD） spectra,electrical conductivity and Seebeck coefficient（thermoelectric power,S） of obtained ZnO samples.The results show that all samples adopt the hexagonal wurtzite structure.At 573 K,the electrical conductivities of ZnO1-xSx（0x≤0.05）（1 723 S.m–1） are much higher than that of neat ZnO（3.02 S.m–1）,while the difference in Seebeck coefficient amongst all samples is small.At 1073K,the power factor of ZnO0.97S0.03 with a value of 2.5×10–4 Wm–1K–2 is largest among all samples and is 10 times as large as that of ZnO.

关 键 词：热电材料 ZNO 等电子掺杂 功率因子 

分 类 号：TN304.2[电子电信—物理电子学] O482.6[理学—固体物理]