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作 者:周圆苑[1] 李海敏[1] 田云飞[1] 肖定全[1] 朱建国[1]
机构地区:[1]四川大学材料科学与工程学院,四川成都610064
出 处:《电子元件与材料》2010年第4期1-4,共4页Electronic Components And Materials
基 金:国家自然科学基金资助项目(No.60771016)
摘 要:采用sol-gel法在SiO2/Si(100)衬底上制备了0.68(Bi0.98La0.02)FeO3-0.32PbTiO3(BLFPT)薄膜。采用快速退火技术,以2~40℃/s速率升温、在700℃下保温100s对BLFPT薄膜进行了后续处理。研究了升温速率对BLFPT薄膜结构性能的影响。XRD测试结果显示BLFPT薄膜为赝立方结构。SEM和AFM结果表明,当升温速率为2℃/s时,BLFPT薄膜表面晶粒更为均匀致密,粗糙度最小。XPS分析显示,Bi、Fe和Ti分别主要以化合态Bi2O3、Fe2O3和TiO2的形式存在。0.68(Bi0.98La0.02)FeO3-PbTiO3(BLFPT) films were prepared on SiO2/Si(100) substrates by the sol-gel method. The BLFPT films were annealed by rapid thermal annealing (RTA) process at 700℃ for 100 s and the heating rates were 2-40℃/s. The effect of different heating rates on the BLFPT films annealed by RTA was investigated. The XRD patterns of BLFPT films show that the structure of the films is the pseudo-cubic structure. The SEM and AFM analyses show that the grains of BLFPT films appear more uniformity and dense, and the surface roughness is the smallest value when the heating rate is 2 ℃/s. The XPS analysis shows that the valence states of Bi, Fe and Ti elements of BLFPT films exist mainly in the form of Bi2O3, Fe2O3 and TiO2, respectively.
分 类 号:TM27[一般工业技术—材料科学与工程]
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