CoFe_2O_4薄膜厚度对其微结构和磁性能的影响  

Effects of thickness for CoFe_2O_4 thin films on their microstructure and magnetic properties

作　　者：张亚磊[1] 杨成韬[1] 于永杰[1] 解群眺[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2010年第2期1-3,共3页Electronic Components And Materials

基　　金：国家"973"计划资助项目(No.51613Z)

摘　　要：以铁和钴的硝酸盐为主要原料,采用sol-gel旋涂法在Si(001)基片上制备了不同厚度的CoFe2O4(CFO)薄膜。研究了薄膜厚度对其结构、形貌及磁性能的影响。结果表明:随着其厚度的增大,薄膜的结晶度变好,薄膜晶粒度逐渐增大到70nm。Ms随着薄膜厚度的增大先增大后减小;Hc的变化规律和Ms相反。当薄膜厚度为800nm时,Ms达到最大值59.2A·m2/kg,此时Hc最小为106.7kA/m。该薄膜具有高度的平行各向异性。Using nitrate of iron and cobalt as main raw materials, CoFe2O4 （CFO） thin films were prepared on Si（001） substrates via the sol-gel spin-coating method. Effects of thickness for the thin films on their microstructure, morphology and magnetic properties were studied. The results indicate that with increase of the thickness, the crystallinity of the thin films gets better and the crystallites of the CFO thin films increase gradually to 70 nm. Ms firstly increase and then decrease with increase of the thickness for the thin films. The change regularity of Hc is contrary to Ms. Ms rise up to the peak value of 59.2 A·m2/kg and Hc decrease to the minimum value of 106.7 kA/m when the thin film’s thickness is 800 nm. The CFO thin films have high parallel anisotropy.

关 键 词：sol-gel旋涂法 CFO薄膜厚度 微结构 磁性能 

分 类 号：O484[理学—固体物理]