氧化铟空心球的合成及其气敏性能研究  

Synthesis and gas-sensing properties of In_2O_3 hollow spheres

作　　者：汪婧妍[1] 高兆芬[2] 潘庆谊[1] 徐甲强[1] 

机构地区：[1]上海大学理学院化学系,上海200444 [2]上饶师范学院化学系,江西上饶334001

出　　处：《电子元件与材料》2010年第2期11-13,共3页Electronic Components And Materials

基　　金：上海市自然科学基金资助项目(No.07ER14039);上海市教委"纳米材料化学"重点学科资助项目(No.J50102)

摘　　要：采用溶剂热–退火反应法合成了氧化铟空心球。所获空心球用XRD,TEM和SEM等表征。发现所合成的氧化铟空心球直径介于0.5-1.0μm,且该空心球是由粒径约50nm的氧化铟纳米块堆积而成。研究了用此空心球制备的气敏元件的气敏性能。结果表明,氧化铟空心球结构有益于提高元件的响应性能。此外,该元件对NO2气体有较快的响应（8s）并且恢复时间较短（15s）。In2O3 hollow spheres were synthesized via a solvothermal-annealing reaction method. Obtained hollow spheres were characterized through XRD, TEM and SEM. The results indicate that the as-synthesized In2O3 possesses hollow spherical structure with diameters of 0.5~1.0 μm which is assembled by In2O3 nanocubes in particle size of about 50 nm. The gas sensing properties of the gas sensor fabricated from as-synthesized In2O3 hollow spheres were investigated. The results reveal that the hollow spherical structure of In2O3 can help to enhance the response property of the gas sensor. Next, the gas sensor has high sensitivity to NO2. And the times of response and recovery are 8 s and 15 s, respectively.

关 键 词：In2O3空心球 溶剂热–退火反应法 气敏元件 NO2 

分 类 号：TN304.92[电子电信—物理电子学]