ZnS掺杂WO_3纳米粉体的制备及H_2S气敏性能  

Preparation and H_2S gas sensitive property of ZnS-doped WO_3 nanopowder

作　　者：魏少红[1] 冯青琴[1] 牛新书[2] 

机构地区：[1]安阳师范学院化学系,河南安阳455000 [2]河南师范大学化学与环境科学学院,河南新乡453002

出　　处：《电子元件与材料》2010年第2期14-16,共3页Electronic Components And Materials

基　　金：河南省杰出青年科学基金资助项目(No.0012);河南省教育厅自然科学研究计划资助项目(No.2009A150001)

摘　　要：采用共沉淀法制备了w（ZnS）为0-0.2%的ZnS-WO3纳米粉体,利用X射线衍射仪分析了粉体的微观结构,探讨了ZnS掺杂量、工作温度对由所制粉体制成的气敏元件的气敏性能的影响。研究发现：适量的ZnS掺杂抑制了WO3晶粒的生长,提高了粉体对H2S的灵敏度。其中,掺杂ZnS的质量分数为1.0%的烧结型气敏元件,在160℃时对体积分数为0.001%的H2S的灵敏度达到87,响应时间7s,恢复时间12s。ZnS-doped WO3 nanopowder containing 0-2.0% ZnS （mass fraction） was prepared by coprecipitation. The microstructure prepared powder was characterized through XRD. The effects of ZnS-doped amount and working temperature on the gas sensitive property of the sensor fabricated from this nanopowder were investigated. The results show that the grain size of WO3 becomes smaller and the sensitivity of the sensor to H2S rises when the ZnS-doped amount is suitable. The sensor has high sensitivity and good selectivity to H2S when mass fraction of ZnS doped is 1.0% and the optimal working temperature of the sensor is 160℃. The sensitivity of the sensor to φ（H2S） of 0.001% is 87, response time is 7 s and recovery time is 12 s.

关 键 词：WO3纳米粉体 ZnS掺杂 共沉淀法 气敏元件 

分 类 号：TP212.2[自动化与计算机技术—检测技术与自动化装置]