一种新型NTC厚膜电阻的制备及电性能研究  

Preparation and electrical properties of a new kind of NTC Thick-film thermistor

作　　者：赵霞妍[1] 袁昌来[1,2] 黄静月[1] 刘心宇[1,2] 李擘[1] 

机构地区：[1]桂林电子科技大学信息材料科学与工程系,广西桂林541004 [2]信息材料广西区重点实验室,广西桂林541004

出　　处：《电子元件与材料》2010年第2期17-19,23,共4页Electronic Components And Materials

基　　金：国家级大学生创新性实验计划资助项目(No.ZCC0094);广西信息材料重点实验室主任基金资助项目(No.PF090569)

摘　　要：以新型BaCoⅡ 0.05CoⅢ0.1Bi0.85O3材料为基体,以CuO为烧结助剂,在790、800、810℃烧结4h制备了NTC厚膜电阻。借助XRD、SEM和阻温特性测试仪,研究了CuO含量对电阻相组成、微观结构及电性能的影响。结果表明：烧结温度为800℃的NTC厚膜电阻主要物相为具有复合立方钙钛矿结构的BaCoⅡ0.05CoⅢ0.1Bi0.85O3,并有少量Bi2O3剩余;该组电阻表面颗粒均匀细小,致密性随CuO含量的增加而趋于增加。对烧结温度为790℃的电阻来说,其室温电阻R25和B25/85随CuO含量的增加而逐渐降低;该电阻的R25、B25/85及活化能Ea分别为0.98-13.40kΩ、931-1855K和0.08-0.16eV。NTC thick-film thermistros were prepared after sintering at 790、800、810 ℃ for 4 h, with new BaCoⅡ0.05 CoⅢ0.1Bi0.85O3 material as the substrate and CuO as the sintering aids. The effects of CuO content on the phase composition, microstructure and electrical properties of thermistors were studied by XRD, SEM and resistance-temperature detector. The results show that the major phase of thermistors sintered at 800 ℃ is BaCoⅡ0.05 CoⅢ0.1Bi0.85O3 with a cubic double perovskite structure, and there is a small amount of Bi2O3 remained in these thermistors containing fine uniform grains; The amount of pores present in these thermistors decreases with increasing CuO content, while the compactness increases. The room temperature resistance R25 and the B25/85 of thermistors sintered at 790℃ decreases with increasing CuO content; And, the R25, B25/85 and activation energy Ea of these thermistors are in ranges of 0.98~13.4 kΩ、931~1 855 K and 0.08~0.16 eV, respectively.

关 键 词：NTC厚膜电阻 BaCoⅡ0.05CoⅢ0.1Bi0.85O3 氧化铜(CuO) 电性能 

分 类 号：TN37[电子电信—物理电子学]