Effect of Bi_2O_3 Additive on the Microstructure and Dielectric Properties of BaTiO_3-Based Ceramics Sintered at Lower Temperature  

作　　者：Shunhua Wu Xuesong Wei Xiaoyong Wang Hongxing Yang Shunqi Gao 

机构地区：[1]Institute of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China

出　　处：《Journal of Materials Science & Technology》2010年第5期472-476,共5页材料科学技术（英文版）

基　　金：supported by the Tianjin Natural Science Foundation, China (Grant No. 06YFJMJC01000)

摘　　要：High performance X8R dielectric ceramics were prepared by dopingBi2O3 to BaTiO3-based ceramics.The effect of small amounts（≤1.2 mol%） ofBi2O3 additive on the microstructure and dielectric properties of BaTiO3-based ceramics have been investigated.The Bi2O3 ,acting as a sintering additive,can effectively lower the sintering temperature of BaTiO3-based ceramics from 1300 to 1130 °C.The bulk density of BaTiO3-based ceramics increased and reached the maximum value with increasingBi2O3 content.The dielectric constant increased with increasingBi2O3 until it reached the maximum value with 0.8 mol%Bi2O3 additive,and the dielectric loss decreased with increasingBi2O3 content.Optimal dielectric properties of ε=2470,tanδ=0.011 and △ε/ε 25 ≤±9%（-55-150 °C） were obtained for the BaTiO3-based ceramics doped with 0.8 mol%Bi2O3 sintered at 1130 °C for 6 h.High performance X8R dielectric ceramics were prepared by dopingBi2O3 to BaTiO3-based ceramics.The effect of small amounts（≤1.2 mol%） ofBi2O3 additive on the microstructure and dielectric properties of BaTiO3-based ceramics have been investigated.The Bi2O3 ,acting as a sintering additive,can effectively lower the sintering temperature of BaTiO3-based ceramics from 1300 to 1130 °C.The bulk density of BaTiO3-based ceramics increased and reached the maximum value with increasingBi2O3 content.The dielectric constant increased with increasingBi2O3 until it reached the maximum value with 0.8 mol%Bi2O3 additive,and the dielectric loss decreased with increasingBi2O3 content.Optimal dielectric properties of ε=2470,tanδ=0.011 and △ε/ε 25 ≤±9%（-55-150 °C） were obtained for the BaTiO3-based ceramics doped with 0.8 mol%Bi2O3 sintered at 1130 °C for 6 h.

关 键 词：BaTiO3-based ceramics BI2O3 Dielectric properties X8R 

分 类 号：TQ174.756[化学工程—陶瓷工业] TQ174.758[化学工程—硅酸盐工业]