半导体断路开关电路-流体耦合数值模拟  

Numerical simulation of semiconductor opening switch with circuit-fluid coupled model

作　　者：李中杰[1] 李永东[1] 王洪广[1] 林舒[1] 刘纯亮[1] 

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,西安710049

出　　处：《强激光与粒子束》2010年第6期1411-1414,共4页High Power Laser and Particle Beams

基　　金：中国博士后基金项目(20080431235)

摘　　要：为了研究掺杂结构为p+-p-n-n+的半导体断路开关的ns脉冲截断机理,根据流体力学方程和全电流方程推导出半导体断路开关内部载流子运动满足的电流-电压关系表达式,提出了一种外电路方程和载流子流体力学方程联立求解的1维耦合数值模型。采用该模型对半导体断路开关的ns脉冲截断过程进行了数值模拟,模拟结果表明:在截断过程中,n-n+结处的载流子数密度首先开始明显降低,并出现高电场,随后p+-p结处也出现类似现象,随着载流子的抽取,高电场区域向p-n结处快速移动,最终在p-n结处完成截断,而基区载流子数密度在截断前后无明显变化。In order to investigate the nanosecond current interruption mechanism of semiconductor opening switch（SOS） with a doping profile of p^＋-p-n-n^＋ structure,a 1D circuit-fluid coupled model was developed by deriving a current-voltage relation expression from the fluid mechanics equations and the total current density equation.The model simultaneously solves the external circuit equations and the internal fluid mechanics equations of SOS.Numerical results show the evolution of carrier density distribution and electric field in the SOS during the nanosecond pulse opening process.At the beginning of the process,the carrier density in the n-n^＋ boundary first dropped obviously with a high electric field yield and similar phenomena occurred in the p^＋-p boundary subsequently.With the abstracting of the carrier,the high electric field regions moved towards the p-n junction rapidly where the current interruption ended off.During the whole process,the carrier density in the base region stayed the same.

关 键 词：半导体断路开关 数值模拟 ns脉冲截断 电路流体耦合模型 

分 类 号：TN78[电子电信—电路与系统]