数值模拟研究半导体断路开关的电流截断特性  

Numerical Simulation of Current Interruption Characteristics in Semiconductor Cut-off Switches

作　　者：杨海燕[1] 赵西安[1] 

机构地区：[1]西安陆军学院信息化研究试验室,陕西西安710108

出　　处：《现代电子技术》2010年第12期179-181,共3页Modern Electronics Technique

摘　　要：半导体断路开关(SOS)效应的发现,促进了全固态脉冲功率源技术的发展和应用。采用一维流体模型,利用SOS数值模拟程序对SOS二极管P+-P-N-N+结构的电流截断特性进行了数值模拟研究。研究了SOS二极管P区扩散深度、外电路参数对SOS电流截断特性的影响。结果表明:P区扩散深度、次级储能电容C2、反向泵浦电感L-的大小对SOS的反向电流截断时间均有较大影响;随着次级储能电容和反向泵浦电感的增大,电流截断时间增大,反向电流峰值和反向电压峰值减小。该研究对SOS二极管工艺设计和外电路优化设计具有理论意义和实用价值。The discovery of the semiconductor opening switch （SOS） effect promoted the development and applications of the all-solid-state pulsed power generator technology. A one-dimensional fluid model is adopted to study the current interuption characteristics of SOS diode P^＋-P-N-N^＋ structure by using SOS numerical simulation program. The influences of the diffusion depth in the diode P-type region on the current interruption characteristics of SOS diode is analyzed. The result shows that the influences of the diffusion depth of P-type region, reverse pulse inductance L^- and secondary capacitor C2 in the external circuit on the reverse current interuption time of SOS is obvious, the peak values of reverse current and reverse voltage decreases with the increase of the secondary capacitor C2 and reverse pulse inductance L^-. The results obtained in this thesis possesses a certain theoretical and practical significance for the SOS diode design and the external circuit optimization.

关 键 词：半导体断路开关 脉冲功率源 数值模拟 电流截断特性 

分 类 号：TN389[电子电信—物理电子学]