新型功率器件N-MCT的PSpice模型  

PSpice Model of the New Type Power Device N-MCT

作　　者：朱鸿志[1] 杨永辉[1] 李华梅[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《电力电子技术》2009年第12期82-83,共2页Power Electronics

摘　　要：作为一种新型的电力电子器件,场控晶闸管(MCT)目前还没有一种比较完善的计算机仿真模型。首先介绍了功率半导体器件N-MCT的基本结构,然后利用PSpice中已有的器件模型和电路模型建立了一个N-MCT的组合模型,并利用多瞬态分析法提取了该模型的参数,最后对该组合模型进行了N-MCT通态特性和放电特性的仿真分析。将仿真结果与实际N-MCT的特性相对照,两者达到了较高的一致度。MOS-controlled thyristor（MCT）is a new power switching device,and there isn＇t an accurate combination model to simulate it now.The fundamental structures of the new-type power device MCT is introduced.One N-MCT model is established by using the existing PSpice model library and the model＇s parameter is obtained with multi-transient analyzing method.Then a on-state character simulation is made on this model as well as the discharge character.The simulative results obtained are compared with the experimental results.It is seems obviously that they have the same results.

关 键 词：晶闸管 仿真模型 参数提取 

分 类 号：TN34[电子电信—物理电子学]