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机构地区:[1]Department of Physics Bohai University [2]College of Science North China University of Technology
出 处:《Journal of Semiconductors》2010年第6期7-11,共5页半导体学报(英文版)
基 金:Project supported by the National Natural Science Foundation of China(No.10704011);LNET(No.2009R01).
摘 要:Spin-dependent electronic transport through a quantum dot coupled to one ferromagnetic lead and one normal metal lead is investigated by using the master equation approach.Both the intradot spin-flip transition and Coulomb interaction are studied for the current polarization p=(I_↑-I_↓)/(I_↑+I_↓).It is found that p is suppressed to zero for a particular regime of one direction bias,while it is enhanced to a relative maximum value when the bias is reversed, which is called the spin-current diode effect.The bias regime of this effect is determined by the dot level position and the intradot Coulomb interaction strength.We give a physical explanation and several control methods for it.This device is realizable with current nanofabrication technology and should have practical applications in spintronics.Spin-dependent electronic transport through a quantum dot coupled to one ferromagnetic lead and one normal metal lead is investigated by using the master equation approach.Both the intradot spin-flip transition and Coulomb interaction are studied for the current polarization p=(I_↑-I_↓)/(I_↑+I_↓).It is found that p is suppressed to zero for a particular regime of one direction bias,while it is enhanced to a relative maximum value when the bias is reversed, which is called the spin-current diode effect.The bias regime of this effect is determined by the dot level position and the intradot Coulomb interaction strength.We give a physical explanation and several control methods for it.This device is realizable with current nanofabrication technology and should have practical applications in spintronics.
关 键 词:spin-diode quantum dot ferromagnetic lead
分 类 号:TN31[电子电信—物理电子学]
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