Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region  

作　　者：何进 郑睿 张立宁 张健 林信南 陈文新 

机构地区：[1]Department of Electronics and Computer Engineering Hong Kong University of Science & Technology [2]Micro & Nano Electric Device and Integrated Technology Group,Key Laboratory of Integrated Microsystems,Peking University,Shenzhen Graduate School [3]Micro & Nano Electric Device and Integrated Technology Group Key Laboratory of Integrated Microsystems,Peking University,Shenzhen Graduate School

出　　处：《Journal of Semiconductors》2010年第6期27-33,共7页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.60876027);the Competitive Earmarked Program from the Research Grant Council of Hong Kong SAR,China(No.HKUST6289/04E);the Industry,Education and Academy Cooperation Program of Guangdong Province,China(No.2009B090300318);the Fundamental Research Project of Shenzhen Science & Technology Foundation,China(No.JC200903160353A).

摘　　要：A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate（SRG） MOSFET from the accumulation to strong inversion region.The original equation is derived from the exact solution of a simplified Poisson equation and then the empirical correction is performed from the mathematical condition required by the continuity of the solution,which results in a continuous surface potential versus voltage equation,allowing the surface potential and the related derivatives to be described by an analytic solution from the accumulation to strong inversion region and from linear to the saturation region accurately and continuously.From these results,the dependences of surface potential and centric potential characteristics on device geometry are analyzed and the results are also verified with the 3-D numerical simulation from the aspect of accuracy and continuity tests.A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate（SRG） MOSFET from the accumulation to strong inversion region.The original equation is derived from the exact solution of a simplified Poisson equation and then the empirical correction is performed from the mathematical condition required by the continuity of the solution,which results in a continuous surface potential versus voltage equation,allowing the surface potential and the related derivatives to be described by an analytic solution from the accumulation to strong inversion region and from linear to the saturation region accurately and continuously.From these results,the dependences of surface potential and centric potential characteristics on device geometry are analyzed and the results are also verified with the 3-D numerical simulation from the aspect of accuracy and continuity tests.

关 键 词：non-classical CMOS surrounding-gate MOSFETs device physics surface potential accuracy continuity issue 

分 类 号：TN386.1[电子电信—物理电子学]