Conductivity modulation enhanced lateral IGBT with SiO_2 shielded layer anode by SIMOX technology on SOI substrate  

作　　者：陈文锁 张波 李肇基 方健 关旭 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic science and Technology of China

出　　处：《Journal of Semiconductors》2010年第6期44-46,共3页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.60876053,60806025,60976060).

摘　　要：A new lateral insulated-gate bipolar transistor（LIGBT） with a SiO_2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductivity modulation effect due to the SiO_2 shielded layer anode structure which can be formed by SIMOX technology.Simulation results show that,for the proposed LIGBT,during the conducting state,the electron-hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT;the conducting current is up to 37% larger than that of the conventional one.The enhanced conductivity modulation effect by SiO_2 shielded layer anode does not sacrifice other characteristics of the device,such as breakdown and switching,but is compatible with other optimized technologies.A new lateral insulated-gate bipolar transistor（LIGBT） with a SiO_2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductivity modulation effect due to the SiO_2 shielded layer anode structure which can be formed by SIMOX technology.Simulation results show that,for the proposed LIGBT,during the conducting state,the electron-hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT;the conducting current is up to 37% larger than that of the conventional one.The enhanced conductivity modulation effect by SiO_2 shielded layer anode does not sacrifice other characteristics of the device,such as breakdown and switching,but is compatible with other optimized technologies.

关 键 词：enhanced conductivity modulation effect shielded anode SIMOX technology 

分 类 号：TN386[电子电信—物理电子学]